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The presence of short-range chemical order can be a key factor in determining the mechanical behavior of metals, but directly and unambiguously determining its distribution in complex concentrated alloy systems can be challenging. Here, we directly identify and quantify chemical order in the globally single phase BCC-TiVNbHf(Al) system using aberration corrected scanning transmission electron microscopy (STEM) paired with spatial statistics methods. To overcome the difficulties of short-range order (SRO) quantification with STEM when the components of an alloy exhibit large atomic number differences and near equiatomic ratios, “null hypothesis” tests are used to separate experiment from a random chemical distribution. Experiment is found to deviate from both the case of an ideal random solid solution and a fully ordered structure with statistical significance. We also identify local chemical order in TiVNbHf and confirm and quantify the enhancement of SRO with the addition of Al. These results provide insight into local chemical order in the promising TiVNbHf(Al) refractory alloys while highlighting the utility of spatial statistics in characterizing nanoscale SRO in compositionally complex systems. 

Abstract Oxygen coordination and vacancy ordering play an important role in dictating the functionality of complex oxides. In this work, an unconventional layering of oxygen ions in a mixed conductor SrCo_1‐xFe_xO_3‐δ(SCFO) thin film grown epitaxially on SrTiO₃(STO) is reported. Scanning transmission electron microscopy (STEM) reveals alternating layers of oxygen deficiency along the growth direction, with the oxygen‐rich layer correlated with the neighboring Co,Fe‐site intensity, and contraction of the Sr–Sr distance. Density functional theory (DFT) calculations and STEM image simulations support the emergence of periodic (Co,Fe)O₆and (Co,Fe)O₄/(Co,Fe)O₅layers, an ordering that is also sensitive to the Co:Fe ratio. 

The temperature-dependent layer-resolved structure of 3 to 44 unit cell thick SrRuO3 (SRO) films grown on Nb-doped SrTiO3 substrates is investigated using a combination of high-resolution synchrotron x-ray diffraction and high-resolution electron microscopy to understand the role that structural distortions play in suppressing ferromagnetism in ultra-thin SRO films. The oxygen octahedral tilts and rotations and Sr displacements characteristic of the bulk orthorhombic phase are found to be strongly dependent on temperature, the film thickness, and the distance away from the film–substrate interface. For thicknesses, t, above the critical thickness for ferromagnetism (t > 3 uc), the orthorhombic distortions decrease with increasing temperature above TC. Below TC, the structure of the films remains constant due to the magneto-structural coupling observed in bulk SRO. The orthorhombic distortions are found to be suppressed in the 2–3 interfacial layers due to structural coupling with the SrTiO3 substrate and correlate with the critical thickness for ferromagnetism in uncapped SRO films. 

Abstract The synthesis of BaZr(S,Se)₃chalcogenide perovskite alloys is demonstrated by selenization of BaZrS₃thin films. The anion‐exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature one‐hundred‐times stronger photoconductive response and a lower density of extended defects, compared to alloy films made by direct growth. The perovskite structure is stable in high‐selenium‐content thin films with and without epitaxy. The manufacturing‐compatible process of selenization in H₂Se gas may spur the development of chalcogenide perovskite solar cell technology. 

The atomic and electronic structures of La0.7Sr0.3MnO3 (LSMO)/La0.7Sr0.3CrO3 (LSCO) multilayer thin films are investigated using aberration corrected scanning transmission electron microscopy (STEM) imaging and spectroscopy. Atomic resolution high angle annular dark-field reveals that LSMO layers have an expanded out-of-plane lattice parameter compared to compressed LSCO layers, contrasting with x-ray diffraction measurements. The expansion is found to result from preferential oxygen vacancy formation in LSMO during STEM sample preparation as determined by electron energy-loss spectroscopy. The La/Sr atom column intensity is also found to oscillate by about 4% between the LSMO and LSCO layers, indicative of La/Sr concentration variation. Using energy-dispersive x-ray spectroscopy in combination with image simulations, we confirm the La/Sr inhomogeneity and elucidate the origin of charge redistribution within the multilayer. These results illuminate the sensitivity of the technique to subtle structural, chemical, and electronic features that can arise to compensate charge imbalances in complex oxide heterostructures. 

Abstract Highly responsive, voltage‐tunable dielectrics are essential for microwave‐telecommunication electronics. Ferroelectric/relaxor materials have been leading candidates for such functionality and have exhibited agile dielectric responses. Here, it is demonstrated that relaxor materials developed from antiferroelectrics can achieve both ultrahigh dielectric response and tunability. The system, based on alloying the archetypal antiferroelectric PbZrO₃with the dielectric BaZrO₃, exhibits a more complex phase evolution than that in traditional relaxors and is characterized by an unconventional multi‐phase competition between antiferroelectric, ferroelectric, and paraelectric order. This interplay of phases can greatly enhance the local heterogeneities and results in relaxor characteristics while preserving considerable polarizability. Upon studying Pb_1‐xBa_xZrO₃forx= 0‐0.45, Pb_0.65Ba_0.35ZrO₃is found to provide for exceptional dielectric tunability under low bias fields (≈81% at 200 kV cm⁻¹and ≈91% at 500 kV cm⁻¹) at 10 kHz, outcompeting most traditional relaxor ferroelectric films. This high tunability is sustained in the radio‐frequency range, resulting in a high commutation quality factor (>2000 at 1 GHz). This work highlights the phase evolution from antiferroelectrics (with lower, “positive” dielectric tunability) to relaxors (with higher, “negative” tunability), underscoring a promising approach to develop relaxors with enhanced functional capabilities and new possibilities. 

Abstract The Rashba effect enables control over the spin degree of freedom, particularly in polar materials where the polar symmetry couples to Rashba‐type spin splitting. The exploration of this effect, however, has been hindered by the scarcity of polar materials exhibiting the bulk‐Rashba effect and rapid spin‐relaxation effects dictated by the D'yakonov–Perel mechanism. Here, a polar LiNbO₃‐typeR3cphase of Bi_1‐xIn_1+xO₃withx≈0.15–0.24 is stabilized via epitaxial growth, which exhibits a bulk‐Rashba effect with suppressed spin relaxation as a result of its unidirectional spin texture. As compared to the previously observed non‐polarPnmaphase, this polar phase exhibits higher conductivity, reduced bandgap, and enhanced dielectric and piezoelectric responses. Combining first‐principles calculations and multimodal magnetotransport measurements, which reveal weak (anti)localization, anisotropic magnetoresistance, planar‐Hall effect, and nonreciprocal charge transport, a bulk‐Rashba effect without rapid spin relaxation is demonstrated. These findings offer insights into spin‐orbit coupling physics within polar oxides and suggest potential spintronic applications. 

Abstract The making of BaZrS₃thin films by molecular beam epitaxy (MBE) is demonstrated. BaZrS₃forms in the orthorhombic distorted‐perovskite structure with corner‐sharing ZrS₆octahedra. The single‐step MBE process results in films smooth on the atomic scale, with near‐perfect BaZrS₃stoichiometry and an atomically sharp interface with the LaAlO₃substrate. The films grow epitaxially via two competing growth modes: buffered epitaxy, with a self‐assembled interface layer that relieves the epitaxial strain, and direct epitaxy, with rotated‐cube‐on‐cube growth that accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites. This work sets the stage for developing chalcogenide perovskites as a family of semiconductor alloys with properties that can be tuned with strain and composition in high‐quality epitaxial thin films, as has been long‐established for other systems including Si‐Ge, III‐Vs, and II‐VIs. The methods demonstrated here also represent a revival of gas‐source chalcogenide MBE.